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MOSFETs IRHNJ9A3130
Infineon
IRHNJ9A3130
--
Diodes, Transistors and Thyristors
MOSFETs
IRHNJ9A3130.pdf
Specification
Product AttributeAttribute Value
EU RoHSSupplier Unconfirmed
MountingSurface Mount
Pin Count3
PCB changed3
Part StatusActive
Channel TypeN
Package Width10.28(Max)
Package Height2.61(Max)
Package Length7.64(Max)
Supplier PackageSMD-0.5
Maximum Power Dissipation (mW)750000
Maximum Drain Source Voltage (V)100
Maximum Continuous Drain Current (A)35
Description
RADIATION HARDENED POWER MOSFET
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