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IRHNM597110
IRHNM597110
MOSFETs IRHNM597110
Infineon
IRHNM597110
--
Diodes, Transistors and Thyristors
MOSFETs
IRHNM597110.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width8.15(Max)
Package Height2.69(Max)
Package Length5.74(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-0.2
Maximum IDSS (uA)10
Process TechnologyR5
Typical Fall Time (ns)85(Max)
Typical Rise Time (ns)26(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)23000
Typical Gate Charge @ Vgs (nC)11(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)24(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.1
Typical Input Capacitance @ Vds (pF)379@25V
Maximum Drain Source Resistance (MOhm)1200@12V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH Si 100V 3.1A 3-Pin SMD-0.2
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