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IRHNS597064
IRHNS597064
MOSFETs IRHNS597064
Infineon
IRHNS597064
--
Diodes, Transistors and Thyristors
MOSFETs
IRHNS597064.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width13.61(Max)
Package Height6.6(Max)
Package Length13.61(Max)
Product CategoryPower MOSFET
Supplier PackageSupIR SMD
Maximum IDSS (uA)10
Process TechnologyR5
Typical Fall Time (ns)35(Max)
Typical Rise Time (ns)150(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ Vgs (nC)200(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35(Max)
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)100(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)56
Typical Input Capacitance @ Vds (pF)7022@25V
Maximum Drain Source Resistance (MOhm)16@12V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 60V 56A 3-Pin(2+Tab) SupIR SMD
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