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MOSFETs IRHQ567110SCS
Infineon
IRHQ567110SCS
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Surface Mount |
| ECCN (US) | Contact Export |
| Pin Count | 28 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 28 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Quad Dual Drain Dual Source |
| Package Width | 11.68(Max) |
| Package Height | 2.41(Max) |
| Package Length | 11.68(Max) |
| Product Category | Power MOSFET |
| Supplier Package | LCC |
| Standard Package Name | LCC |
| Typical Fall Time (ns) | 90(Max) |
| Typical Rise Time (ns) | 24(Max) |
| Number of Elements per Chip | 4 |
| Maximum Power Dissipation (mW) | 12000 |
| Typical Gate Charge @ Vgs (nC) | 13(Max)@12V@N Channel|11(Max)@12V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 20(Max) |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 32(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.6@N Channel|2.8@ P Channel |
| Typical Input Capacitance @ Vds (pF) | 371@25V@N Channel|377@25V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 270@12V@N Channel|1200@12V@P Channel |
| Description |
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