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IRL2203NLPBF
IRL2203NLPBF
MOSFETs IRL2203NLPBF
Infineon
IRL2203NLPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRL2203NLPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)66
Typical Rise Time (ns)160
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3
Minimum Gate Resistance (Ohm)0.2
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ Vgs (nC)60(Max)@4.5V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)1270
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.9
Typical Turn-Off Delay Time (ns)23
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)33(Max)
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)14(Max)
Typical Reverse Recovery Time (ns)56
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)116
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3290@25V
Typical Reverse Recovery Charge (nC)110
Maximum Drain Source Resistance (mOhm)7@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)16
Maximum Pulsed Drain Current @ TC=25°C (A)400
Typical Reverse Transfer Capacitance @ Vds (pF)170@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-262
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