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IRL3502PBF
IRL3502PBF
MOSFETs IRL3502PBF
Infineon
IRL3502PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRL3502PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)130
Typical Rise Time (ns)140
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Typical Gate Charge @ Vgs (nC)110(Max)@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)96
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)110
Typical Input Capacitance @ Vds (pF)4700@15V
Maximum Drain Source Resistance (MOhm)7@7V
Description
Trans MOSFET N-CH 20V 110A 3-Pin(3+Tab) TO-220AB
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