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IRL3803STRLPBF
IRL3803STRLPBF
MOSFETs IRL3803STRLPBF
Infineon
IRL3803STRLPBF
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)35
Typical Rise Time (ns)230
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ Vgs (nC)140(Max)@4.5V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)1800
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.7
Typical Turn-Off Delay Time (ns)29
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)78(Max)
Maximum Gate Threshold Voltage (V)1(Min)
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)41(Max)
Typical Reverse Recovery Time (ns)120
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)140
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)5000@25V
Typical Reverse Recovery Charge (nC)450
Maximum Drain Source Resistance (MOhm)6@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)16
Maximum Pulsed Drain Current @ TC=25°C (A)470
Typical Reverse Transfer Capacitance @ Vds (pF)880@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK T/R
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