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IRL40B209
IRL40B209
MOSFETs IRL40B209
Infineon
IRL40B209
--
Diodes, Transistors and Thyristors
MOSFETs
IRL40B209.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)1
Process TechnologyHEXFET
Typical Fall Time (ns)150
Typical Rise Time (ns)198
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ Vgs (nC)180@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)56
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)188
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)414
Typical Input Capacitance @ Vds (pF)15140@25V
Maximum Drain Source Resistance (mOhm)1.25@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube
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