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IRL40S212
IRL40S212
MOSFETs IRL40S212
Infineon
IRL40S212
--
Diodes, Transistors and Thyristors
MOSFETs
IRL40S212.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)84
Typical Rise Time (ns)154
Number of Elements per Chip1
Maximum Power Dissipation (mW)231000
Typical Gate Charge @ Vgs (nC)91@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)39
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)88
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)254
Typical Input Capacitance @ Vds (pF)8320@25V
Maximum Drain Source Resistance (MOhm)1.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 40V 254A 3-Pin(2+Tab) D2PAK T/R
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