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IRL40SC209
IRL40SC209
MOSFETs IRL40SC209
Infineon
IRL40SC209
--
Diodes, Transistors and Thyristors
MOSFETs
IRL40SC209.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count7
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.54(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)138
Typical Rise Time (ns)182
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ Vgs (nC)178@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)63
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)182
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)478
Typical Input Capacitance @ Vds (pF)15270@25V
Maximum Drain Source Resistance (mOhm)0.8@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 40V 478A 7-Pin(6+Tab) D2PAK T/R
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