Tab | Tab |
PPAP | No |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | LTB |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.83(Max) |
Package Height | 9.02(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Maximum IDSS (uA) | 25 |
Process Technology | HEXFET |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 26 |
Typical Rise Time (ns) | 53 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 79000 |
Typical Gate Charge @ Vgs (nC) | 34(Max)@5V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Output Capacitance (pF) | 160 |
Typical Turn-On Delay Time (ns) | 7.2 |
Maximum Drain Source Voltage (V) | 100 |
Typical Gate Plateau Voltage (V) | 3.5 |
Typical Turn-Off Delay Time (ns) | 30 |
Maximum Diode Forward Voltage (V) | 1.3 |
Typical Gate to Drain Charge (nC) | 20(Max) |
Maximum Gate Threshold Voltage (V) | 2 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 4.8(Max) |
Typical Reverse Recovery Time (ns) | 140 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 17 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 800@25V |
Typical Reverse Recovery Charge (nC) | 740 |
Maximum Drain Source Resistance (mOhm) | 100@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 16 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 60 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 90@25V |
Description | |