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IRL7833SPBF
IRL7833SPBF
MOSFETs IRL7833SPBF
Infineon
IRL7833SPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRL7833SPBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)6.9
Typical Rise Time (ns)50
Typical Switch Charge (nC)18
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Typical Gate Charge @ Vgs (nC)32@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)950
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.8
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)13
Maximum Gate Threshold Voltage (V)2.3
Minimum Gate Threshold Voltage (V)1.4
Typical Gate to Source Charge (nC)8.7
Typical Reverse Recovery Time (ns)42
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)150
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)4170@15V
Typical Reverse Recovery Charge (nC)34
Maximum Drain Source Resistance (MOhm)3.8@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)600
Maximum Power Dissipation on PCB @ TC=25°C (W)140
Typical Reverse Transfer Capacitance @ Vds (pF)470@15V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH 30V 150A 3-Pin(2+Tab) D2PAK Tube
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