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IRLF120
IRLF120
MOSFETs IRLF120
Infineon
IRLF120
--
Diodes, Transistors and Thyristors
MOSFETs
IRLF120.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
Diameter9.22(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Height4.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Process TechnologyHEXFET
Standard Package NameTO-205-AF
Typical Fall Time (ns)27(Max)
Typical Rise Time (ns)73(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Typical Gate Charge @ Vgs (nC)13(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)13(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)41(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.3
Typical Input Capacitance @ Vds (pF)480@25V
Maximum Drain Source Resistance (MOhm)350@5V
Description
Trans MOSFET N-CH 100V 5.3A 3-Pin TO-39
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