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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IRLHM630TR2PBF
IRLHM630TR2PBF
MOSFETs IRLHM630TR2PBF
Infineon
IRLHM630TR2PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRLHM630TR2PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.3
Package Height0.88
Package Length3.3
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Process TechnologyHEXFET
Standard Package NameQFN
Typical Fall Time (ns)43
Typical Rise Time (ns)32
Number of Elements per Chip1
Maximum Power Dissipation (mW)2700
Typical Gate Charge @ Vgs (nC)41@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)9.1
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)65
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Typical Input Capacitance @ Vds (pF)3170@25V
Maximum Drain Source Resistance (MOhm)3.5@4.5V
Description
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
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