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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IRLHS6376TRPBF
IRLHS6376TRPBF
MOSFETs IRLHS6376TRPBF
Infineon
IRLHS6376TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRLHS6376TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width2
Package Height0.88
Package Length2
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameQFN
Typical Fall Time (ns)9.4
Typical Rise Time (ns)11
Number of Elements per Chip2
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)2.8@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)4.4
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)11
Maximum Gate Threshold Voltage (V)1.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.6
Typical Input Capacitance @ Vds (pF)270@25V
Maximum Drain Source Resistance (MOhm)63@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
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