Product Attribute | Attribute Value |
PPAP | No |
Material | Si |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | HEXFET |
Typical Fall Time (ns) | 4.8 |
Typical Rise Time (ns) | 9.5 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 540 |
Typical Gate Charge @ Vgs (nC) | 2.6@4.5V |
Maximum Gate Source Voltage (V) | ±12 |
Typical Output Capacitance (pF) | 51 |
Typical Turn-On Delay Time (ns) | 2.5 |
Maximum Drain Source Voltage (V) | 20 |
Typical Turn-Off Delay Time (ns) | 9.7 |
Typical Gate to Drain Charge (nC) | 1.1 |
Maximum Gate Threshold Voltage (V) | 0.7(Min) |
Typical Gate to Source Charge (nC) | 0.41 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 1.2 |
Typical Input Capacitance @ Vds (pF) | 110@15V |
Typical Reverse Recovery Charge (nC) | 16 |
Maximum Drain Source Resistance (mOhm) | 250@4.5V |
Description |