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IRLML2502TR
IRLML2502TR
MOSFETs IRLML2502TR
Infineon
IRLML2502TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRLML2502TR.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyHEXFET
Standard Package NameSOT-23
Typical Fall Time (ns)26
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)8@5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)90
Typical Turn-On Delay Time (ns)7.5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)54
Typical Gate to Drain Charge (nC)1.7
Maximum Gate Threshold Voltage (V)1.2
Typical Gate to Source Charge (nC)1.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.2
Typical Input Capacitance @ Vds (pF)740@15V
Typical Reverse Recovery Charge (nC)8.6
Maximum Drain Source Resistance (MOhm)45@4.5V
Description
Trans MOSFET N-CH Si 20V 4.2A 3-Pin SOT-23 T/R
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