PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 3 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 1.4(Max) |
Package Height | 1.02(Max) |
Package Length | 3.04(Max) |
Product Category | Power MOSFET |
Supplier Package | SOT-23 |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Standard Package Name | SOT |
Typical Fall Time (ns) | 26 |
Typical Rise Time (ns) | 10 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 1250 |
Typical Gate Charge @ Vgs (nC) | 8@5V |
Maximum Gate Source Voltage (V) | ±12 |
Typical Output Capacitance (pF) | 90 |
Typical Turn-On Delay Time (ns) | 7.5 |
Maximum Drain Source Voltage (V) | 20 |
Typical Gate Plateau Voltage (V) | 2.1 |
Typical Turn-Off Delay Time (ns) | 54 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Gate to Drain Charge (nC) | 1.7 |
Maximum Gate Threshold Voltage (V) | 1.2 |
Minimum Gate Threshold Voltage (V) | 0.6 |
Typical Gate to Source Charge (nC) | 1.8 |
Typical Reverse Recovery Time (ns) | 16 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.2 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 740@15V |
Typical Reverse Recovery Charge (nC) | 8.6 |
Maximum Drain Source Resistance (MOhm) | 45@4.5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 12 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 33 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 66@15V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 100 |
Description | |