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IRLML6402
IRLML6402
MOSFETs IRLML6402
Infineon
IRLML6402
--
Diodes, Transistors and Thyristors
MOSFETs
IRLML6402.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyHEXFET
Standard Package NameSOT-23
Typical Fall Time (ns)381
Typical Rise Time (ns)48
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ Vgs (nC)8@5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)350
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)588
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.7
Typical Input Capacitance @ Vds (pF)633@10V
Maximum Drain Source Resistance (MOhm)65@4.5V
Description
Trans MOSFET P-CH Si 20V 3.7A 3-Pin SOT-23 T/R
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