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IRLR110
IRLR110
MOSFETs IRLR110
Vishay
IRLR110
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR110.pdf
Specification
Product AttributeAttribute Value
HTS8542.31.00.01
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)25
Standard Package NameTO-252
Typical Fall Time (ns)17
Typical Rise Time (ns)47
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)6.1(Max)@5V
Maximum Gate Source Voltage (V)±10
Typical Output Capacitance (pF)80
Typical Turn-On Delay Time (ns)9.3
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)4.1
Typical Turn-Off Delay Time (ns)16
Maximum Diode Forward Voltage (V)2.5
Typical Gate to Drain Charge (nC)3.3(Max)
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)2(Max)
Typical Reverse Recovery Time (ns)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.3
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)250@25V
Typical Reverse Recovery Charge (nC)500
Maximum Drain Source Resistance (MOhm)540@5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)10
Maximum Pulsed Drain Current @ TC=25°C (A)17
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)15@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK
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