HTS | 8542.31.00.01 |
Tab | Tab |
PPAP | No |
EU RoHS | Not Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 2 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 6.22(Max) |
Package Height | 2.39(Max) |
Package Length | 6.73(Max) |
Product Category | Power MOSFET |
Supplier Package | DPAK |
Maximum IDSS (uA) | 25 |
Standard Package Name | TO-252 |
Typical Fall Time (ns) | 17 |
Typical Rise Time (ns) | 47 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ Vgs (nC) | 6.1(Max)@5V |
Maximum Gate Source Voltage (V) | ±10 |
Typical Output Capacitance (pF) | 80 |
Typical Turn-On Delay Time (ns) | 9.3 |
Maximum Drain Source Voltage (V) | 100 |
Typical Gate Plateau Voltage (V) | 4.1 |
Typical Turn-Off Delay Time (ns) | 16 |
Maximum Diode Forward Voltage (V) | 2.5 |
Typical Gate to Drain Charge (nC) | 3.3(Max) |
Maximum Gate Threshold Voltage (V) | 2 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 2(Max) |
Typical Reverse Recovery Time (ns) | 100 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.3 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 250@25V |
Typical Reverse Recovery Charge (nC) | 500 |
Maximum Drain Source Resistance (MOhm) | 540@5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 10 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 17 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 15@25V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Description | |