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IRLR2905TR
IRLR2905TR
MOSFETs IRLR2905TR
Infineon
IRLR2905TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR2905TR.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)15
Typical Rise Time (ns)84
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Typical Gate Charge @ Vgs (nC)48(Max)@5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)26
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)42
Typical Input Capacitance @ Vds (pF)1700@25V
Maximum Drain Source Resistance (mOhm)27@10V
Description
Trans MOSFET N-CH Si 55V 42A 3-Pin(2+Tab) DPAK T/R
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