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IRLR3303PBF
IRLR3303PBF
MOSFETs IRLR3303PBF
Infineon
IRLR3303PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR3303PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyHEXFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)36
Typical Rise Time (ns)200
Number of Elements per Chip1
Maximum Power Dissipation (mW)68000
Typical Gate Charge @ Vgs (nC)26(Max)@4.5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)7.4
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)14
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)35
Typical Input Capacitance @ Vds (pF)870@25V
Maximum Drain Source Resistance (mOhm)31@10V
Description
Trans MOSFET N-CH Si 30V 35A 3-Pin(2+Tab) DPAK
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