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IRLR3636PBF
IRLR3636PBF
MOSFETs IRLR3636PBF
Infineon
IRLR3636PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR3636PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)96
Typical Rise Time (ns)216
Number of Elements per Chip1
Maximum Power Dissipation (mW)143000
Typical Gate Charge @ Vgs (nC)33@4.5V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)332
Typical Turn-On Delay Time (ns)45
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3.4
Typical Turn-Off Delay Time (ns)43
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)15
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)11
Typical Reverse Recovery Time (ns)27
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)99
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)3779@50V
Typical Reverse Recovery Charge (nC)31
Maximum Drain Source Resistance (MOhm)6.8@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)16
Maximum Pulsed Drain Current @ TC=25°C (A)396
Typical Reverse Transfer Capacitance @ Vds (pF)163@50V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK Tube
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