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IRLR6225PBF
IRLR6225PBF
MOSFETs IRLR6225PBF
Infineon
IRLR6225PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR6225PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)52
Typical Rise Time (ns)37
Number of Elements per Chip1
Maximum Power Dissipation (mW)63000
Typical Gate Charge @ Vgs (nC)48@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)9.7
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)63
Maximum Gate Threshold Voltage (V)1.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)3770@10V
Maximum Drain Source Resistance (MOhm)4@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 20V 100A 3-Pin(2+Tab) DPAK Tube
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