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MOSFETs IRLR7833HR
Infineon
IRLR7833HR
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR7833HR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyHEXFET
Typical Fall Time (ns)15
Typical Rise Time (ns)6.9
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Typical Gate Charge @ Vgs (nC)33@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)23
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)140
Typical Input Capacitance @ Vds (pF)4010@15V
Maximum Drain Source Resistance (MOhm)4.5@10V
Description
Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab)
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