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IRLR8103V
IRLR8103V
MOSFETs IRLR8103V
Infineon
IRLR8103V
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR8103V.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)18
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)115000
Typical Gate Charge @ Vgs (nC)27@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)91
Maximum Drain Source Resistance (MOhm)9@10V
Description
Trans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK T/R
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