Tab | Tab |
PPAP | No |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 7 |
Automotive | No |
PCB changed | 6 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quint Source |
Package Width | 9.65(Max) |
Package Height | 4.83(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | D2PAK |
Maximum IDSS (uA) | 20 |
Process Technology | HEXFET |
Standard Package Name | TO-263 |
Typical Fall Time (ns) | 170 |
Typical Rise Time (ns) | 540 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 380000 |
Typical Gate Charge @ Vgs (nC) | 110@4.5V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Output Capacitance (pF) | 1025 |
Typical Turn-On Delay Time (ns) | 81 |
Maximum Drain Source Voltage (V) | 60 |
Typical Gate Plateau Voltage (V) | 3.9 |
Typical Turn-Off Delay Time (ns) | 89 |
Maximum Diode Forward Voltage (V) | 1.3 |
Typical Gate to Drain Charge (nC) | 53 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 33 |
Typical Reverse Recovery Time (ns) | 57 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 300 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 11270@50V |
Typical Reverse Recovery Charge (nC) | 140 |
Maximum Drain Source Resistance (MOhm) | 1.9@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 16 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 1000 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 520@50V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
Description | |