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IRLS3036-7PPBF
IRLS3036-7PPBF
MOSFETs IRLS3036-7PPBF
Infineon
IRLS3036-7PPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count7
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)170
Typical Rise Time (ns)540
Number of Elements per Chip1
Maximum Power Dissipation (mW)380000
Typical Gate Charge @ Vgs (nC)110@4.5V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)1025
Typical Turn-On Delay Time (ns)81
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3.9
Typical Turn-Off Delay Time (ns)89
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)53
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)33
Typical Reverse Recovery Time (ns)57
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)300
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)11270@50V
Typical Reverse Recovery Charge (nC)140
Maximum Drain Source Resistance (MOhm)1.9@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)16
Maximum Pulsed Drain Current @ TC=25°C (A)1000
Typical Reverse Transfer Capacitance @ Vds (pF)520@50V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH Si 60V 300A 7-Pin(6+Tab) D2PAK Tube
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