Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 2.39(Max) |
Package Height | 6.22(Max) |
Package Length | 6.73(Max) |
Product Category | Power MOSFET |
Supplier Package | IPAK |
Process Technology | HEXFET |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 23 |
Typical Rise Time (ns) | 47 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 28000 |
Typical Gate Charge @ Vgs (nC) | 7.9(Max)@5V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Output Capacitance (pF) | 80 |
Typical Turn-On Delay Time (ns) | 6.5 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 12 |
Typical Gate to Drain Charge (nC) | 4.4(Max) |
Maximum Gate Threshold Voltage (V) | 1(Min) |
Typical Gate to Source Charge (nC) | 1.4(Max) |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 10 |
Typical Input Capacitance @ Vds (pF) | 265@25V |
Typical Reverse Recovery Charge (nC) | 48 |
Maximum Drain Source Resistance (MOhm) | 140@10V |
Description |