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IRLU014NPBF
IRLU014NPBF
MOSFETs IRLU014NPBF
Infineon
IRLU014NPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRLU014NPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.39(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Process TechnologyHEXFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)23
Typical Rise Time (ns)47
Number of Elements per Chip1
Maximum Power Dissipation (mW)28000
Typical Gate Charge @ Vgs (nC)7.9(Max)@5V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)80
Typical Turn-On Delay Time (ns)6.5
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)12
Typical Gate to Drain Charge (nC)4.4(Max)
Maximum Gate Threshold Voltage (V)1(Min)
Typical Gate to Source Charge (nC)1.4(Max)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)265@25V
Typical Reverse Recovery Charge (nC)48
Maximum Drain Source Resistance (MOhm)140@10V
Description
Trans MOSFET N-CH Si 55V 10A 3-Pin(3+Tab) IPAK
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