Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 2.39(Max) |
Package Height | 6.22(Max) |
Package Length | 6.73(Max) |
Product Category | Power MOSFET |
Supplier Package | IPAK |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 8.5 |
Typical Rise Time (ns) | 46 |
Typical Switch Charge (nC) | 5.1 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 3.9 |
Maximum Power Dissipation (mW) | 63000 |
Typical Gate Charge @ Vgs (nC) | 10@4.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 453 |
Typical Turn-On Delay Time (ns) | 9.7 |
Maximum Drain Source Voltage (V) | 25 |
Typical Gate Plateau Voltage (V) | 3 |
Typical Turn-Off Delay Time (ns) | 12 |
Maximum Diode Forward Voltage (V) | 1 |
Typical Gate to Drain Charge (nC) | 3.6 |
Maximum Gate Threshold Voltage (V) | 2.35 |
Minimum Gate Threshold Voltage (V) | 1.35 |
Typical Gate Threshold Voltage (V) | 1.8 |
Typical Gate to Source Charge (nC) | 2.3 |
Typical Reverse Recovery Time (ns) | 19 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 81 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 1470@13V |
Typical Reverse Recovery Charge (nC) | 17 |
Maximum Drain Source Resistance (mOhm) | 5.7@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 325 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 185@13V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Description | |