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IRLU8256PBF
IRLU8256PBF
MOSFETs IRLU8256PBF
Infineon
IRLU8256PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRLU8256PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.39(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Process TechnologyHEXFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8.5
Typical Rise Time (ns)46
Typical Switch Charge (nC)5.1
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3.9
Maximum Power Dissipation (mW)63000
Typical Gate Charge @ Vgs (nC)10@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)453
Typical Turn-On Delay Time (ns)9.7
Maximum Drain Source Voltage (V)25
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)12
Maximum Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)3.6
Maximum Gate Threshold Voltage (V)2.35
Minimum Gate Threshold Voltage (V)1.35
Typical Gate Threshold Voltage (V)1.8
Typical Gate to Source Charge (nC)2.3
Typical Reverse Recovery Time (ns)19
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)81
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1470@13V
Typical Reverse Recovery Charge (nC)17
Maximum Drain Source Resistance (mOhm)5.7@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)325
Typical Reverse Transfer Capacitance @ Vds (pF)185@13V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 25V 81A 3-Pin(3+Tab) IPAK
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