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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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ISC060N10NM6ATMA1
ISC060N10NM6ATMA1
MOSFETs ISC060N10NM6ATMA1
Infineon
ISC060N10NM6ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
ISC060N10NM6ATMA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyOptiMOS 6
Typical Fall Time (ns)4.4
Typical Rise Time (ns)1.65
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)26
Typical Gate Charge @ Vgs (nC)26@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)8.1
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)13
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1900@50V
Maximum Drain Source Resistance (MOhm)6@10V
Description
Trans MOSFET N-CH 100V 15A T/R
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