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ISC230N10NM6ATMA1
ISC230N10NM6ATMA1
MOSFETs ISC230N10NM6ATMA1
Infineon
ISC230N10NM6ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Typical Fall Time (ns)9
Typical Rise Time (ns)1
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ Vgs (nC)7.4@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)6.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.7
Typical Input Capacitance @ Vds (pF)530@50V
Maximum Drain Source Resistance (mOhm)23@10V
Description
OptiMOS™ 6 power MOSFET 100V Normal Level in SuperSO8 package
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