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ISS17EP06LMXTSA1
ISS17EP06LMXTSA1
MOSFETs ISS17EP06LMXTSA1
Infineon
ISS17EP06LMXTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.3
Package Height1(Max)
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Process TechnologyOptiMOS
Typical Fall Time (ns)9
Typical Rise Time (ns)3
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Typical Gate Charge @ 10V (nC)1.79
Typical Gate Charge @ Vgs (nC)1.79@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)2
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)27
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.3
Typical Input Capacitance @ Vds (pF)55@30V
Maximum Drain Source Resistance (mOhm)1700@10V
Description
Trans MOSFET P-CH 60V 0.3A 3-Pin SOT-23 T/R
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