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MOSFETs ISZ0602NLSATMA1
Infineon
ISZ0602NLSATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Mounting | Surface Mount |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.4(Max) |
| Package Height | 1.1(Max) |
| Package Length | 3.4(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TSDSON EP |
| Process Technology | OptiMOS 5 |
| Typical Fall Time (ns) | 4.8 |
| Typical Rise Time (ns) | 10 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2100 |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Gate Charge @ Vgs (nC) | 11@4.5V|22@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 5.6 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1400@40V |
| Maximum Drain Source Resistance (MOhm) | 7.8@10V |
| Description |
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