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MOSFETs ISZ080N10NM6ATMA1
Infineon
ISZ080N10NM6ATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.3 |
| Package Height | 1 |
| Package Length | 3.3 |
| Product Category | Power MOSFET |
| Supplier Package | TSDSON EP |
| Process Technology | OptiMOS 6 |
| Typical Fall Time (ns) | 4.3 |
| Typical Rise Time (ns) | 1.5 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Gate Charge @ 10V (nC) | 19 |
| Typical Gate Charge @ Vgs (nC) | 19@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 6.4 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 10.7 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 1400@50V |
| Maximum Drain Source Resistance (MOhm) | 8.04@10V |
| Description |
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