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MOSFETs JAN2N6770
Microchip Technology
JAN2N6770
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 26.42 |
| Package Height | 7.92 |
| Package Length | 39.29 |
| Product Category | Power MOSFET |
| Supplier Package | TO-3 |
| Maximum IDSS (uA) | 25 |
| Standard Package Name | TO-204-AA |
| Typical Fall Time (ns) | 130(Max) |
| Typical Rise Time (ns) | 190(Max) |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 4000 |
| Typical Gate Charge @ 10V (nC) | 120(Max) |
| Typical Gate Charge @ Vgs (nC) | 120(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 35(Max) |
| Maximum Drain Source Voltage (V) | 500 |
| Typical Turn-Off Delay Time (ns) | 170(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Maximum Drain Source Resistance (MOhm) | 500@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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