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JAN2N6796
JAN2N6796
MOSFETs JAN2N6796
Microchip Technology
JAN2N6796
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Diodes, Transistors and Thyristors
MOSFETs
JAN2N6796.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSNot Compliant
Diameter9.4(Max)
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel TypeN
ConfigurationSingle
Package Height6.6(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Maximum IDSS (uA)25
Standard Package NameTO-205-AF
Typical Fall Time (ns)45(Max)
Typical Rise Time (ns)75(Max)
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Typical Gate Charge @ 10V (nC)28.51
Typical Gate Charge @ Vgs (nC)28.51@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)40(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (MOhm)195@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 8A 3-Pin TO-39
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