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JANS2N6849U
JANS2N6849U
MOSFETs JANS2N6849U
Infineon
JANS2N6849U
--
Diodes, Transistors and Thyristors
MOSFETs
JANS2N6849U.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count18
AutomotiveNo
PCB changed18
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Hex Drain Octal Source Dual Gate
Package Width7.49(Max)
Package Height2.92(Max)
Package Length9.14(Max)
Product CategoryPower MOSFET
Supplier PackageLCC
Process TechnologyHEXFET
Typical Fall Time (ns)140(Max)
Typical Rise Time (ns)140(Max)
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Typical Gate Charge @ 10V (nC)35(Max)
Typical Gate Charge @ Vgs (nC)35(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)60(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)140(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)790@25V
Maximum Drain Source Resistance (mOhm)345@10V
Description
Trans MOSFET P-CH 100V 6.5A 18-Pin LCC
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