Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Not Compliant |
ECCN (US) | EAR99 |
Automotive | No |
Part Status | LTB |
Channel Type | N |
Configuration | Single Hex Drain Octal Source Dual Gate |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 25 |
Typical Fall Time (ns) | 40 |
Typical Rise Time (ns) | 32 |
Supplier Temperature Grade | Military |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 25000 |
Typical Gate Charge @ Vgs (nC) | 50(Max)@12V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 25 |
Maximum Drain Source Voltage (V) | 200 |
Typical Turn-Off Delay Time (ns) | 40 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 5.5 |
Maximum Drain Source Resistance (MOhm) | 364@12V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |