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MOSFETs JANSF2N7616UBN
Infineon
JANSF2N7616UBN
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryPower MOSFET
Supplier PackageCase UBN
Typical Fall Time (ns)13(Max)
Typical Rise Time (ns)24(Max)
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)600
Typical Gate Charge @ Vgs (nC)3.6(Max)@4.5V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)8(Max)
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)30(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.8
Typical Input Capacitance @ Vds (pF)166@25V
Maximum Drain Source Resistance (mOhm)680@4.5V
Description
Trans MOSFET N-CH 60V 0.8A 3-Pin Case UBN
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