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MOSFETs JANSR2N7477T1
Infineon
JANSR2N7477T1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Through Hole |
| ECCN (US) | Contact Export |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.6(Max) |
| Package Height | 13.84(Max) |
| Package Length | 13.84(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-254AA |
| Maximum IDSS (uA) | 10 |
| Process Technology | R5 |
| Standard Package Name | TO-254-AA |
| Typical Fall Time (ns) | 65(Max) |
| Typical Rise Time (ns) | 125(Max) |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 208000 |
| Typical Gate Charge @ Vgs (nC) | 165(Max)@12V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 35(Max) |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 80(Max) |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 37 |
| Typical Input Capacitance @ Vds (pF) | 5410@25V |
| Maximum Drain Source Resistance (MOhm) | 61@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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