Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Supplier Unconfirmed |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | Contact Export |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Width | 8.15(Max) |
Package Height | 2.69(Max) |
Package Length | 5.74(Max) |
Product Category | Power MOSFET |
Supplier Package | SMD-0.2 |
Maximum IDSS (uA) | 10 |
Process Technology | R5 |
Typical Fall Time (ns) | 85(Max) |
Typical Rise Time (ns) | 26(Max) |
Supplier Temperature Grade | Military |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 23000 |
Typical Gate Charge @ Vgs (nC) | 11(Max)@12V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 18(Max) |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 24(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3.1 |
Typical Input Capacitance @ Vds (pF) | 379@25V |
Maximum Drain Source Resistance (mOhm) | 1200@12V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |