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MCH6613-TL-E
MCH6613-TL-E
MOSFETs MCH6613-TL-E
onsemi
MCH6613-TL-E
--
Diodes, Transistors and Thyristors
MOSFETs
MCH6613-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeFlat
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.6
Package Height0.88(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageMCPH
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)120@N Channel|130@P Channel
Typical Rise Time (ns)65@N Channel|55@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)800
Typical Gate Charge @ 10V (nC)1.58@N Channel|1.43@P Channel
Typical Gate Charge @ Vgs (nC)1.58@10V@N Channel|1.43@10V@P Channel
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)19@N Channel|24@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)155@N Channel|120@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.2@P Channel|0.35@N Channel
Typical Input Capacitance @ Vds (pF)7@10V@N Channel|7.5@10V@P Channel
Maximum Drain Source Resistance (mOhm)3700@4V@N Channel|10400@4V@P Channel
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH Si 30V 0.35A/0.2A 6-Pin MCPH T/R
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