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MCH6660-TL-W
MCH6660-TL-W
MOSFETs MCH6660-TL-W
onsemi
MCH6660-TL-W
--
Diodes, Transistors and Thyristors
MOSFETs
MCH6660-TL-W.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeFlat
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.6
Package Height0.88(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageMCPH
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)12@N Channel|14@P Channel
Typical Rise Time (ns)9.7@P Channel|11@N Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)800
Typical Gate Charge @ Vgs (nC)1.7@4.5V@P Channel|1.8@4.5V@N Channel
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)5.1@N Channel|5.3@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)14.5@N Channel|16@P Channel
Maximum Gate Threshold Voltage (V)1.3@N Channel|1.4@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2@N Channel|1.5@P Channel
Typical Input Capacitance @ Vds (pF)120@10V@P Channel|128@10V@N Channel
Maximum Drain Source Resistance (MOhm)136@4.5V@N Channel|266@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH 20V 2A/1.5A 6-Pin MCPH T/R
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