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MMFT960T1
MMFT960T1
MOSFETs MMFT960T1
onsemi
MMFT960T1
--
Diodes, Transistors and Thyristors
MOSFETs
MMFT960T1.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)10
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Typical Gate Charge @ 10V (nC)3.2
Typical Gate Charge @ Vgs (nC)3.2@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)33
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)5
Typical Gate to Drain Charge (nC)2
Maximum Gate Threshold Voltage (V)3.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)1.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.3
Operating Junction Temperature (°C)-65 to 150
Typical Input Capacitance @ Vds (pF)65@25V
Maximum Drain Source Resistance (mOhm)1700@10V
Maximum Gate Source Leakage Current (nA)50
Maximum Positive Gate Source Voltage (V)30
Maximum Power Dissipation on PCB @ TC=25°C (W)0.8
Typical Reverse Transfer Capacitance @ Vds (pF)7@25V
Description
Trans MOSFET N-CH Si 60V 0.3A 4-Pin(3+Tab) SOT-223 T/R
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