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MOSFETs MSC025SMA120J
Microchip Technology
MSC025SMA120J
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Screw |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Source |
| Package Width | 25.4(Max) |
| Package Height | 9.6(Max) |
| Package Length | 38.2(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOT-227 |
| Maximum IDSS (uA) | 100 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 33 |
| Typical Rise Time (ns) | 11 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 278000 |
| Typical Gate Charge @ Vgs (nC) | 232@20V |
| Maximum Gate Source Voltage (V) | 25 |
| Typical Output Capacitance (pF) | 270 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Gate Plateau Voltage (V) | 7 |
| Typical Turn-Off Delay Time (ns) | 69 |
| Typical Diode Forward Voltage (V) | 4.2 |
| Typical Gate to Drain Charge (nC) | 50 |
| Maximum Gate Threshold Voltage (V) | 2.8(Typ) |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Gate Threshold Voltage (V) | 2.8 |
| Typical Gate to Source Charge (nC) | 41 |
| Typical Reverse Recovery Time (ns) | 90 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 77 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3020@1000V |
| Typical Reverse Recovery Charge (nC) | 550 |
| Maximum Drain Source Resistance (MOhm) | 31@20V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 25 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 275 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 25@1000V |
| Description |
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