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MTB30P06VT4
MTB30P06VT4
MOSFETs MTB30P06VT4
onsemi
MTB30P06VT4
--
Diodes, Transistors and Thyristors
MOSFETs
MTB30P06VT4.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)10
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)52.4
Typical Rise Time (ns)25.9
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)54
Typical Gate Charge @ Vgs (nC)54@10V
Maximum Gate Source Voltage (V)±15
Typical Turn-On Delay Time (ns)14.7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)98
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)1562@25V
Maximum Drain Source Resistance (mOhm)80@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 60V 30A 3-Pin(2+Tab) D2PAK T/R
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