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MTB50N06V
MTB50N06V
MOSFETs MTB50N06V
onsemi
MTB50N06V
--
Diodes, Transistors and Thyristors
MOSFETs
MTB50N06V.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)10
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)54
Typical Rise Time (ns)122
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)47
Typical Gate Charge @ Vgs (nC)47@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)465
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)6.1
Typical Turn-Off Delay Time (ns)64
Maximum Diode Forward Voltage (V)2.5
Typical Diode Forward Voltage (V)1.06
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)2.7
Typical Reverse Recovery Time (ns)84
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)42
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1644@25V
Typical Reverse Recovery Charge (nC)280
Maximum Drain Source Resistance (mOhm)28@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)147
Maximum Power Dissipation on PCB @ TC=25°C (W)3
Typical Reverse Transfer Capacitance @ Vds (pF)112@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK Rail
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