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MTD4N20E
MTD4N20E
MOSFETs MTD4N20E
onsemi
MTD4N20E
--
Diodes, Transistors and Thyristors
MOSFETs
MTD4N20E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Standard Package NameTO-252
Typical Fall Time (ns)6
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Typical Gate Charge @ 10V (nC)9.2
Typical Gate Charge @ Vgs (nC)9.2@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)15
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)311@25V
Maximum Drain Source Resistance (mOhm)1200@10V
Description
Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) DPAK Rail
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