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MTP12N10E
MTP12N10E
MOSFETs MTP12N10E
onsemi
MTP12N10E
--
Diodes, Transistors and Thyristors
MOSFETs
MTP12N10E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.28(Max)
Package Length10.28(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)30
Typical Rise Time (ns)64
Number of Elements per Chip1
Maximum Power Dissipation (mW)79000
Typical Gate Charge @ 10V (nC)18
Typical Gate Charge @ Vgs (nC)18@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)21
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)600@25V
Maximum Drain Source Resistance (mOhm)160@10V
Description
Trans MOSFET N-CH Si 100V 12A 3-Pin(3+Tab) TO-220AB Rail
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