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MTP12P10
MTP12P10
MOSFETs MTP12P10
onsemi
MTP12P10
--
Diodes, Transistors and Thyristors
MOSFETs
MTP12P10.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.83(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)10
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)150(Max)
Typical Rise Time (ns)150(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ 10V (nC)33
Typical Gate Charge @ Vgs (nC)33@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)575(Max)
Typical Turn-On Delay Time (ns)50(Max)
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)9.8
Typical Turn-Off Delay Time (ns)150(Max)
Maximum Diode Forward Voltage (V)5.5
Typical Diode Forward Voltage (V)4
Typical Gate to Drain Charge (nC)17
Maximum Gate Threshold Voltage (V)4.5
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)16
Typical Reverse Recovery Time (ns)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)12
Operating Junction Temperature (°C)-65 to 150
Typical Input Capacitance @ Vds (pF)920(Max)@25V
Maximum Drain Source Resistance (mOhm)300@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)28
Typical Reverse Transfer Capacitance @ Vds (pF)200(Max)@25V
Description
Trans MOSFET P-CH Si 100V 12A 3-Pin(3+Tab) TO-220AB Tube
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