HTS | 8541.21.00.95 |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Not Compliant |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Width | 4.83(Max) |
Package Height | 9.28(Max) |
Package Length | 10.53(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Maximum IDSS (uA) | 10 |
Standard Package Name | TO-220 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 150(Max) |
Typical Rise Time (ns) | 150(Max) |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 75000 |
Typical Gate Charge @ 10V (nC) | 33 |
Typical Gate Charge @ Vgs (nC) | 33@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 575(Max) |
Typical Turn-On Delay Time (ns) | 50(Max) |
Maximum Drain Source Voltage (V) | 100 |
Typical Gate Plateau Voltage (V) | 9.8 |
Typical Turn-Off Delay Time (ns) | 150(Max) |
Maximum Diode Forward Voltage (V) | 5.5 |
Typical Diode Forward Voltage (V) | 4 |
Typical Gate to Drain Charge (nC) | 17 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 16 |
Typical Reverse Recovery Time (ns) | 300 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -65 |
Maximum Continuous Drain Current (A) | 12 |
Operating Junction Temperature (°C) | -65 to 150 |
Typical Input Capacitance @ Vds (pF) | 920(Max)@25V |
Maximum Drain Source Resistance (mOhm) | 300@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 28 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 200(Max)@25V |
Description | |